Semester 4

OUTCOMES

CO1:  The students will be able to plot the VI characteristics of all diodes and can design a p-n junction structure given required electrical performance and compare the experimental data to the theoretical curve of the diodes.

CO2: The students will be able to use the scanned-load-line methods to obtain the I-V characteristic of the BJTs

CO3: The students will be able to design and implement single-stage BJT amplifiers and observe amplitude and frequency response.

CO4: The students will be able to calculate the terminal currents : I_E, I_C, I_B

CO5: The students will be able to describe the basic FET structure/operation by channel types (n or p), and by the presence/absence of conduction channel 

CO6: The students will be able to calculate the threshold voltage (V_T) of MOS structures and explain how V_T can be controlled

CO7: The students will be able to describe the structures and the operating principles of JFETs, MOSFETs and design a MOSFET structure given required electrical performance

CO8: The students will be able to draw practically the characteristics of SCR and UJT and will be able to explain the operating principles, structures, electrical characteristics of various optoelectronic devices like:LEDs, photo detectors , solar cells